Can a prolonged healing pressure injury be benefited by using an AI mattress? A case study.

BACKGROUND: Pressure injuries are a common and serious issue for bedridden residents in long-term-care facilities. Areas of bony prominences, such as the scapula, sacrum, and heels, are more likely to develop pressure injuries. The management of pressure injury wounds include dressing changes, repositioning, away from moisture, decreasing the occurrence of friction and shear, and more. Some supportive surfaces are also used for pressure injury cases such as gel pads, alternating pressure air mattresses, and air-fluidized beds. The aim of this case study was to determine whether the use of an artificial intelligent mattress can improve a nursing home resident with prolonged pressure injury. CASE PRESENTATION: A retrospective study design was conducted for this case study. A 79-year-old male developed a pressure injury in the sacrum. His pressure injury was initially at stage 4, with a score of 12 by the Braden scale. The PUSH score was 16. During 5.5 months of routine care plus the use of the traditional alternative air mattress, in the nursing home, the wound stayed in stage 3 but the PUSH score increased up to 11. An artificial intelligence mattress utilizing 3D InterSoft was used to detect the bony prominences and redistribute the external pressure of the skin. It implements a color guided schematic of 26 colors to indicate the amount of pressure of the skin. RESULTS: The wound size was decreased and all eczema on the resident's back diminished. The PUSH score was down to 6, as the artificial intelligent mattress was added into the routine care. The staff also reported that the resident's quality of sleep improved and moaning decreased. The hemiplegic side is at greater risk of developing pressure injury. CONCLUSIONS: This novice device appeared to accelerate wound healing in this case. In the future, more cases should be tested, and different care models or mattress can be explored.

Flexible Textile-Based Pressure Sensing System Applied in the Operating Room for Pressure Injury Monitoring of Cardiac Operation Patients.

Pressure injury is the most important issue facing paralysis patients and the elderly, especially in long-term care or nursing. A new interfacial pressure sensing system combined with a flexible textile-based pressure sensor array and a real-time readout system improved by the Kalman filter is proposed to monitor interfacial pressure progress in the cardiac operation. With the design of the Kalman filter and parameter optimization, noise immunity can be improved by approximately 72%. Additionally, cardiac operation patients were selected to test this developed system for the direct correlation between pressure injury and interfacial pressure for the first time. The pressure progress of the operation time was recorded and presented with the visible data by time- and 2-dimension-dependent characteristics. In the data for 47 cardiac operation patients, an extreme body mass index (BMI) and significantly increased pressure after 2 h are the top 2 factors associated with the occurrence of pressure injury. This methodology can be used to prevent high interfacial pressure in high-risk patients before and during operation. It can be suggested that this system, integrated with air mattresses, can improve the quality of care and reduce the burden of the workforce and medical cost, especially for pressure injury.

Crystal synthesis and effects of epitaxial perovskite manganite underlayer conditions on characteristics of ZnO nanostructured heterostructures.

This study presents the synthesis of high-density aligned wurtzite ZnO nanostructures using thermal evaporation on perovskite (La,Sr)MnO3(LSMO) epitaxy to form a heterostructure without the assistance of metallic catalysis. LSMO epitaxial films are RF-sputtered with various crystal qualities to examine the correlation between the interface and electrical characteristics of the heterostructures. The ZnO nanostructures-LSMO epitaxial heterostructures show electrical rectifying behavior without inserting an ultrathin insulating layer at the hetero-interface. Misfit strain, intrinsic strain, and crystal defects are major factors in causing a phase separation in the as-prepared manganite LSMO epitaxial films. The coexistence of a charge-ordered insulating domain and a ferromagnetic metallic domain causes inhomogeneous electrical contact at the ZnO-LSMO heterointerfaces, further deteriorating the junction characteristics. A high-temperature annealing procedure and moderate LSMO epitaxy film thickness are required for the construction of an efficient ZnO nanostructures-LSMO epitaxy junction.

High-performance bottom-gate poly-Si polysilicon-oxide-nitride-oxide-silicon thin film transistors crystallized by excimer laser irradiation for two-bit nonvolatile memory applications.

High-performance bottom-gate (BG) poly-Si polysilicon-oxide-nitride-oxide-silicon (SONOS) TFTs with single grain boundary perpendicular to the channel direction have been demonstrated via simple excimer-laser-crystallization (ELC) method. Under an appropriate laser irradiation energy density, the silicon grain growth started from the thicker sidewalls intrinsically caused by the bottom-gate structure and impinged in the center of the channel. Therefore, the proposed ELC BG SONOS TFTs exhibited superior transistor characteristics than the conventional solid-phase-crystallized ones, such as higher field effect mobility of 393 cm2/V-s and steeper subthreshold swing of 0.296 V/dec. Due to the high field effect mobility, the electron velocity, impact ionization, and conduction current density could be enhanced effectively, thus improving the memory performance. Based on this mobility-enhanced scheme, the proposed ELC BG SONOS TFTs exhibited better performance in terms of relatively large memory window, high program/erase speed, long retention time, and 2-bit operation. Such an ELC BG SONOS TFT with single-grain boundary in the channel is compatible with the conventional a-Si TFT process and therefore very promising for the embedded memory in the system-on-panel applications.

Field-emission stability of hydrothermally synthesized aluminum-doped zinc oxide nanostructures.

The Al-doped ZnO (AZO) nanostructures field-emission arrays (FEAs) were hydrothermally synthesized on AZO/glass substrate. The samples with Al-dosage of 3 at.% show the morphology as nanowires vertically grown on the substrates and a structure of c-axis elongated single-crystalline wurtzite. The good field-emission (i.e., the large anode current and low fluctuation of 15.9%) can be found by AZO nanostructure FEAs with well-designed Al-dosage (i.e., 3 at.%) because of the vertical nanowires with the less structural defects and superior crystallinity. Moreover, the Full width at half maximum (FWHM) of near band-edge emission (NBE) decreased as the increase of annealing temperature, representing the compensated structural defects during oxygen ambient annealing. After the oxygen annealing at 500 degrees C, the hydrothermal AZO nanostructure FEAs revealed the excellent electrical characteristics (i.e., the larger anode current and uniform distribution of induced fluorescence) and enhanced field-emission stability (i.e., the lowest current fluctuation of 5.97%).

High-performance ZnO thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method.

In this paper, high-performance bottom-gate (BG) thin-film transistors (TFTs) with zinc oxide (ZnO) artificially location-controlled lateral grain growth have been prepared via low-temperature hydrothermal method. For the proper design of source/drain structure of ZnO/Ti/Pt thin films, the grains can be laterally grown from the under-cut ZnO beneath the Ti/Pt layer. Consequently, the single one vertical grain boundary perpendicular to the current flow will be produced in the channel region as the grown grains from the source/drain both sides are impinged. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 microm/10 microm) demonstrated the higher field-effect mobility of 6.09 cm2/V x s, lower threshold voltage of 3.67 V, higher on/off current ratio above 10(6), and superior current drivability, reflecting the high-quality ZnO thin films with less grain boundary effect in the channel region.

The effects of nanometal-induced crystallization on the electrical characteristics of bottom-gate poly-Si thin-film transistors.

The effects of active layer thickness and device dimensions on nanometal-induced crystallization (nano-MIC) were studied to determine the electrical characteristics of the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with bottom-gate structures. The nano-MIC poly-Si film was obtained via deposition of a 0.4-nm-thick Ni film on the amorphous silicon layer and subsequent annealing at 550 degrees C for 0.5 to 8 h. The EDS revealed a approximately 0.1% Ni concentration in the poly-Si film. The cross-sectional TEM image shows the vertical-grain growth mechanism, where the bottom side of the grain exhibits a larger crytalline area than the top side. Therefore, the field effect mobility of the bottom-gate poly-Si TFTs increases with increased active-amorphous-silicon (a-Si) thickness. Furthermore, the mobility increases when the device dimensions are scaled down. A mechanism for explaining such phenomenon in relation to the nano-MIC bottom-gate poly-Si TFTs was also proposed.

Effect of oxygen annealing on the ultraviolet photoresponse of P-NiO-nanoflower/n-ZnO-nanowire heterostructures.

A transparent ultraviolet (UV) sensor using nanoheterojunctions (NHJs) composed of p-type NiO nanoflowers (NFs) and n-type ZnO nanowires (NWs) was prepared through a sequential low-temperature hydrothermal-growth process. The devices that were annealed in an oxygen (O2) ambient exhibited better rectification behavior (I forward/I reverse = 427), a lower forward threshold voltage (V(th) = 0.98 V), a lower leakage current (1.68 x 10(-5) A/cm2), and superior sensitivity (I uv/I dark = 57.8; I visible/I dark = 1.25) to UV light (lambda = 325 nm) than the unannealed devices. The remarkably improved device performances and optoelectronic characteristics of the annealed p-NiO-NF/n-ZnO-NW NHJs can be associated with their fewer structural defects, fewer interfacial defects, and better crystallinity. A stable and repeatable operation of dynamic photoresponse was also observed in the annealed devices. The excellent sensitivity and repeatable photoresponse to UV light of the hydrothermally grown p-NiO-NF/n-ZnO-NW NHJs annealed in a suitable O2 ambient indicate that they can be applied to nano-integrated optoelectronic devices.

Field-emission characteristics of Al-doped ZnO nanostructures hydrothermally synthesized at low temperature.

The aluminum-doped ZnO (AZO) nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at a temperature as low as 85 degrees C. The morphologies, crystallinity, optical emission properties, and chemical bonding states of AZO nanostructures show evident dependence on the aluminum dosage. The morphologies of AZO nanostructures were changed from vertically aligned nanowires (NWs), and NWs coexisted with nanosheets (NSs), to complete NSs in respect of the Al-dosages of 0-3 at.%, 5 at.%, and 7 at.%, correspondingly. The undoped ZnO and lightly Al-doped AZO (< or = 3 at.%) NWs are single-crystalline wurtzite structure. In contrast, heavily Al-doped AZO sample is polycrystalline. The AZO nanostructure with 3 at.% Al-dosages reveals the optimal crystallinity and less structural defects, reflecting the longest carrier lifetime and highest conductivity. Consequently, the field-emission characteristics of such an AZO emitter can exhibit the higher current density, larger field-enhancement factor (beta) of 3131, lower turn-on field of 2.17 V/microm, and lower threshold field of 3.43 V/microm.

Study on fatigue and breakdown properties of Pt/(Pb,Sr)TiO(3)/Pt capacitors.

Pulsed-laser deposited (Pb,Sr)TiO(3) (PSrT) films on Pt/SiO(2)/Si substrate at various ambient oxygen pressures (P(O(2))) are investigated in this work. Films deposited at P(O(2)) below 100 mTorr exhibit the (100) preferred orientation and a tetragonal structure with larger tetragonality. In addition, films deposited at 80 mTorr exhibit the most apparent ferroelectric properties in contrast to those deposited at 200 mTorr. Moreover, films deposited at higher P(O(2)) also exhibit longer lifetimes and higher breakdown fields due to their smaller leakage current density, in terms of the reduction of defects, compensation of oxygen vacancies (OVs), an improved interface and small cluster sizes. An energy band model reveals that fatigue properties of PSrT films are dominated by interfacial states at low P(O(2)) and by deep trapping states at high P(O(2)), which could be ascribed to OVs located at the interfaces and inside films, respectively.